NPN transistor added to high-performance bipolar power transistors

STMicroelectronics' 3STR1630 is an NPN transistor that offers a combination of high current capacity, collector-emitter blocking voltage and ultra-low collector-emitter saturation voltage.

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STMicroelectronics has introduced the first member in a new family of high-performance bipolar power transistors. The new transistors offer a combination of high current capability, collector-emitter blocking voltage and ultra-low collector-emitter saturation voltage, making them ideal for use in LED drives, motor and relay drives and dc-dc converters, according to STMicroelectronics.

The 3STR1630 is an NPN transistor manufactured using a new low-voltage planar technology. The planar technology incorporates a double-metal process that allows the cell density to be almost doubled without requiring the use of sophisticated photolithography equipment.

In addition to increasing the current capability by about 50 percent for the same die size, the double-metal process enables transistors with Vceo ratings up to 100 V, higher working switching frequencies (up to 300 kHz), and a 40% reduction in Vce(sat).

The first member of the new family, the 3STR1630, has a minimum BV_CEO of 30 V, offering a compromise between a 28 V blocking voltage capability and minimum Vce(sat), with an equivalent on-resistance of only 100 milliOhms at hFE figure of 50. In addition, it can handle a continuous current as high as 6 A while being housed in a small outline SOT-23 package.

www.st.com

STMicroelectronics

- Edited by Amanda McLeman, Control Engineering, www.controleng.com